High power transistor drive

1 GTR GTR

1) GTR I b GTR GTR GTR

2)

3) GTR

1

1 di b / dt I bm I b1 GTR t r GTR I b1 GTR GTR t s GTR I b2 t s t f GTR GTR GTR

2 GTR GTR GTR GTR GTR GTR GTR GTR

2

GTR 2 GTR VD 1

U D =0.7V U ce =1.4V GTR

VD 1 VD 2 GTR VD 2 GTR VD 4

In the circuit, VD 1 should select the fast recovery diode. During the recovery of VD 1 , the current can flow from the collector to the base and the GTR is turned on. VD2 and VD3 should select fast diodes whose conduction speed will affect the GTR base current rise rate.

Box Header

Box Header

Box Header

ATKCONN ELECTRONICS CO., LTD , https://www.atkconn.com