The Japan Information and Communication Research Institute (NICT) and Tamura Manufacturing Co., Ltd. announced on January 5, 2012 that they have developed transistors using gallium oxide (Ga2O3) single crystal substrates. Compared with SiC and GaN which have been used in the field of power semiconductors, it is expected to significantly reduce manufacturing costs.
The transistor developed this time is a "metal semiconductor field effect transistor" in which a metal having a Schottky junction is used for the gate electrode. The production method is produced by forming an n-type Ga2O3 film by molecular beam epitaxy on a β-Ga2O3 single crystal substrate produced by a liquid growth method. The withstand voltage at the time of the cutoff is 250 V or more, the leakage current is about several μA/mm, and the current switching ratio is about 104.
The band gap of β-Ga2O3 in Ga2O3 is 4.8 to 4.9 eV, which is larger than 3.3 eV of SiC and 3.4 eV of GaN, and it is expected to achieve high withstand voltage and low loss of SiC and GaN. Therefore, it can be used in areas requiring high voltage and high current such as railways and transmission lines. Further, since the production of the single crystal substrate does not require conditions such as high temperature and high pressure, and the utilization rate of the raw material is high, it is expected that the single crystal substrate can be mass-produced at a low cost.
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