LED luminous efficiency increased by 100 times? National Taiwan University develops "zero defect" semiconductor materials


For too long, when the thin semiconductor materials, electronic, optoelectronic components performance of the more adverse effects, however, zero defect semiconductor material multinational team at National Taiwan leads the world in research and development, through the "Fix defect" approach will enhance LED The luminous efficacy is 100 times and has been published in the journal Science.

The study was conducted by Ali Javey, a professor at the University of California, Berkeley, He Zhihao, a professor at the King Abdullah University of Science and Technology, Li Lan, the president of the front desk, and Lian Dexuan, a doctor at the University of Taiwan. The two-dimensional materials were immersed in organic superacids. It can make the single-layer film reach “zero defect” and greatly improve the luminous efficiency.

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The R&D team at National Taiwan University explained that two-dimensional semiconductor materials have special electronic conduction, optical and mechanical properties that can be integrated into today's semiconductor component manufacturing processes and are considered to have great potential to replace traditional coffin components, including molybdenum disulfide (MoS2). It is one of the most popular semiconductor two-dimensional materials, but with the current synthetic preparation technology, the defect density of two-dimensional materials is still high.

After long-term research, the multinational research team found that the molybdenum disulfide (MoS2) material is infiltrated into the organic super acid of the bistriflimide, which can greatly improve the quantum efficiency of the two-dimensional material, which can be increased from less than 1% to nearly 100%. , bringing revolutionary changes to the transistor.

This technology is expected to be applied in the future development led transparent display, super-efficient solar cells, high-sensitivity photodetector, and low power consumption nanoscale transistors.

The first author of this study, Lian Dexuan, is a young Ph.D. student who has cultivated in Taiwan. He received the IEEE Scholarship from the International Institute of Electronics and Semiconductors for the first time this year. He just completed his doctoral oral exam, and he is about to graduate this semester. It was also the first paper published by the National Taiwan University to be selected at the VLSI technology conference. It was selected as the focus article and was reported by 30 international media.

Lian Dexuan has been implementing the gantry program for the second year of the Ministry of Science and Technology at the University of California, Berkeley, and will continue to serve as a postdoctoral researcher at the University of California at Berkeley.

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