Material: solid bare copper Number of pairs: 4 pairs
Conductor diameter: 0.584 ±0.005mm
Insulation:
Material: HDPE and FRPE
Diameter: 1.15 ±0.03mm
Average thickness: 0.225mm
Minimum point thickness: 0.2245mm
First screen: aluminum foil (superposition rate: 25%)
Overall screen: 48/0.1mm TC braid shield (braid density: 40%)
Jacket rid cord: optional
Sheath:
Material: LSZH
Nominal diameter: 6.0 ±0.2mm
Average thickness: 0.55mm
Minimum point thickness: 0.545mm
Includes:
Central cross frame
Aluminum-plastic laminated screen
Jacket: LSZH
Packaging:
305m/1000ft easy pulling box
500m/wooden reel
1000m/wooden reel
Â
Material: solid bare copper Number of pairs: 4 pairs
Conductor diameter: 0.584 ±0.005mm
Insulation:
Material: HDPE and FRPE
Diameter: 1.15 ±0.03mm
Average thickness: 0.225mm
Minimum point thickness: 0.2245mm
First screen: aluminum foil (superposition rate: 25%)
Overall screen: 48/0.1mm TC braid shield (braid density: 40%)
Jacket rid cord: optional
Sheath:
Material: LSZH
Nominal diameter: 6.0 ±0.2mm
Average thickness: 0.55mm
Minimum point thickness: 0.545mm
Includes:
Central cross frame
Aluminum-plastic laminated screen
Jacket: LSZH
Packaging:
305m/1000ft easy pulling box
500m/wooden reel
1000m/wooden reel
Â
The Schottky Diode is another type of semiconductor diode which can be used in a variety of wave shaping, switching and rectification applications the same as any other junction diode. The main adavantage is that the forward voltage drop of a Schottky Diode is substantially less than the 0.7 volts of the conventional silicon pn-junction diode.
Schottky diodes have many useful applications from rectification, signal conditioning and switching, through to TTL and CMOS logic gates due mainly to their low power and fast switching speeds.
the Schottky Diode also known as a Schottky Barrier Diode is a solid-state semiconductor diode in which a metal electrode and an n-type semiconductor form the diodes ms-junction giving it two major advantages over traditional pn-junction diodes, a faster switching speed, and a low forward bias voltage.
The metal–to-semiconductor or ms-junction provides a much lower knee voltage of typically 0.3 to 0.4 volts compared against a value of 0.6 to 0.9 volts seen in a standard silicon base pn-junction diode for the same value of forward current.
Variations in the metal and semiconductor materials used for their construction means that silicon carbide (SiC) Schottky diodes are able to turn [ON" with with a forward voltage drop as little as 0.2 volts with the Schottky diode replacing the less used germanium diode in many applications requiring a low knee voltage.
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